Performance of multiplexed Ge:Ga detector arrays in the far infrared

Details Performance of multiplexed Ge:Ga detector arrays in the far infrared Performance of multiplexed Ge:Ga detector arrays in the far infrared

Oct 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990stin...9114087f&link_type=abstract

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Computer Science

Performance

Far Infrared Radiation, Field Effect Transistors, Linear Arrays, Multiplexing, Radiation Detectors, Switches, Focal Plane Devices, Gallium Compounds, Germanium Compounds, Switching

Scientific paper

The performance of two multi-element, multiplexed Ge:Ga linear arrays under low-background conditions was investigated. The on-focal switching is accomplished by MOSFET switches, and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns, and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the highest responsivity was 584 A/W, the noise equivalent power was 1.0 x 10-16 W/square root of Hz, and the read noise was 6100 electrons/sample. A detailed description of the test setup and procedure is presented.

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