X-ray photoelectronic spectroscopy on telluride crystal grown in tube with carbon film

Details X-ray photoelectronic spectroscopy on telluride crystal grown in tube with carbon film X-ray photoelectronic spectroscopy on telluride crystal grown in tube with carbon film

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..286z&link_type=abstract

Proc. SPIE Vol. 2746, p. 286-289, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Scientific paper

II-VI and IV-VI compound semiconductors such as PbTe, CdTe and HgCdTe crystals were grown from melt with a special technique through Carbon Film formed on the wall of quartz tube by the process of Thermal Decomposition (CFTD). The efficiency of CFTD was investigated by means of X-ray Photoelectron Spectroscopy. The results show that the line of Carbon Film is 0.5 eV lower than the line of the graphite. The Carbon film can avoid the contamination and the sticking between the quartz tube and the crystal. The comparative study of the quartz tube wall with the CFTD and those without CFTD, the tube wall before crystallization and those after crystallization and the surface of the crystals grown in the tubes was conducted separately. The results agree with the measuring of the Auger electron spectrum.

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