Other
Scientific paper
Dec 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021...67l&link_type=abstract
Proc. SPIE Vol. 2021, p. 67-78, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W. B
Other
Scientific paper
We used molecular beam epitaxy to codeposit IrSi(subscript 3) films on p-type Si(111) and Si(100) substrates at elevated temperatures. Seemann-Bohlin x-ray diffraction reveals the formation of IrSi(subscript 3) at temperatures as low as 450 degree(s)C. We find that the growth of 100 angstroms IrSi(subscript 3) films on Si(111) and Si(100) substrates is similar to that of 450 angstroms IrSi(subscript 3) samples. Using low-energy electron diffraction, Bragg-Brentano x-ray, and transmission electron microscope (TEM) diffraction we identify a previously unreported c-axis oriented growth mode for IrSi(subscript 3) films deposited around 700 degree(s)C on Si(111) substrates. Indexing of TEM diffraction patterns suggests that the lattice constants for IrSi(subscript 3) in these thin films are the same as values derived for bulk IrSi(subscript 3) by other researchers. Atomic force microscopy and TEM images show the formation of continuous 100 angstroms IrSi(subscript 3) films at temperatures as high as 630 degree(s)C on Si(100) substrates and the formation of epitaxial IrSi(subscript 3) islands for temperatures above 670 degree(s)C on Si(111).
Falco Charles M.
Gibson Gary A.
Lange Davis A.
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