Long-wavelength GexSi1-x/Si heterojunction infrared detectors and focal-plane arrays

Details Long-wavelength GexSi1-x/Si heterojunction infrared detectors and focal-plane arrays Long-wavelength GexSi1-x/Si heterojunction infrared detectors and focal-plane arrays

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..580t&link_type=abstract

Proc. SPIE Vol. 1540, p. 580-595, Infrared Technology XVII, Bjorn F. Andresen; Marija S. Scholl; Irving J. Spiro; Eds.

Computer Science

2

Scientific paper

Heterojunction Ge(subscript x)Si(subscript 1-x)/Si internal-photoemission infrared detectors exhibiting nearly ideal thermionic-emission dark-current characteristics have been fabricated with cutoff wavelengths out to 25 micrometers . Heteroepitaxial p-Ge(subscript x)Si(subscript 1-x) layers, degenerately doped with boron to concentrations exceeding 10(superscript 20) cm(superscript -3) in order to obtain high free-carrier absorption, are grown in Si substrates by molecular beam epitaxy. The detector cutoff wavelength, which is determined to first order by the valence- band offset, is tailored by varying the composition of the Ge(subscript x)Si(subscript 1-x) layer and can be fine tuned by adjusting such parameters as the doping concentration and growth temperature. High-quality imaging without uniformity correction has been demonstrated in the long-wavelength infrared spectral band for 400 X 400- and 320 X 244-element focal plane arrays consisting of Ge(subscript x)Si(subscript 1-x)/Si detectors, which have cutoff wavelengths of 9.3 and 10.5 micrometers , respectively, and monolithic CCD readout circuitry.

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