The Influence of a Variable Initial Composition on Stellar Silicon Burning

Details The Influence of a Variable Initial Composition on Stellar Silicon Burning The Influence of a Variable Initial Composition on Stellar Silicon Burning

Nov 1968

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1968ap%26ss...2..384t&link_type=abstract

Astrophysics and Space Science, Volume 2, Issue 3, pp.384-390

Astronomy and Astrophysics

Astrophysics

4

Scientific paper

Silicon burning at a temperatureT=3×109K has been studied for three initial abundance configurations: (1) X(Si28)=1; (2) X(Si28)=X(Mg24)=0.5; and (3) X(Si28)=X(S32)=0.5. It may be observed that, in the absence of beta-decay, the results obtained for cases (2) and (3), in which admixtures of substantial mass fractions of Mg24 and S32 into a silicon region are considered, will converge toward those of the pure silicon relaxation problem. This convergence takes place on a rapid time scale for the Mg24 admixture while, in the case of a S32 admixture, the abundances of the heavy elements (A>28) are enhanced for a substantial fraction of the lifetime of the silicon burning process.

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