Signatures of the s-Process in Presolar Silicon Carbide Grains: Barium through Hafnium

Details Signatures of the s-Process in Presolar Silicon Carbide Grains: Barium through Hafnium Signatures of the s-Process in Presolar Silicon Carbide Grains: Barium through Hafnium

Aug 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006apj...647..676y&link_type=abstract

The Astrophysical Journal, Volume 647, Issue 1, pp. 676-684.

Astronomy and Astrophysics

Astronomy

10

Meteors, Meteoroids, Nuclear Reactions, Nucleosynthesis, Abundances, Stars: Agb And Post-Agb, Stars: Carbon

Scientific paper

Isotopic and elemental abundance signatures in the mass range Ba through Hf have been determined in a silicon carbide-rich sample of the Murchison carbonaceous chondrite, using inductively coupled plasma mass spectrometry (ICP-MS). Despite the problem of some isobaric interferences, useful results were obtained for a number of isotopes. Disagreements between astrophysical predictions and previous results for 137Ba and 146Nd obtained by thermal ionization mass spectrometry are confirmed. Our data for Dy are more in line with predictions, however. The s-process signatures for several other elements in the rare earth element (REE) mass range were observed for the first time and are also consistent with theoretical predictions. The elemental abundance pattern shows deficit relative to production ratios of the more volatile REE, notably Yb, and, to a lesser extent, Sm and Eu. This may allow estimating an average condensation temperature of trace elements into SiC.

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