Ionising radiation-induced effects in doped germanium FIR photoconductors

Details Ionising radiation-induced effects in doped germanium FIR photoconductors Ionising radiation-induced effects in doped germanium FIR photoconductors

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..309p&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 309-312 (SEE N94-15025 03-19)

Astronomy and Astrophysics

Astronomy

Far Infrared Radiation, Germanium, Infrared Astronomy, Photoconductors, Spacecraft Instruments, European Space Programs, Infrared Space Observatory (Iso), Ionizing Radiation, Irradiation, Spectrometers

Scientific paper

Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currently the most sensitive detectors for FIR satellite instruments in the wavelength range 40 to 200 micrometers. Due to their high sensitivity and relatively large volume, the performance of these detectors is strongly influenced by ionizing radiation in space. Individual absorption events cause glitches in the data stream which must be rejected; and changes in detector dark current, responsivity and noise arise due to the accumulated ionizing radiation exposure. It is essential to characterize and minimize these effects in order to attain the best overall performance of satellite-borne detectors. Radiation tests in Ge:Be and Ge:Ga (stressed and unstressed) detectors for the ISO (Infrared Space Observatory) Long Wavelength Spectrometer (LWS), a low background FIR astronomical instrument, and SAFIRE (Spectroscopy of an Atmosphere using Far Infrared Emission), a higher background Earth looking instrument, were carried out. The effects of ionizing radiation on the performance parameters of the different detectors types are described and discussed. The effectiveness of curing the detectors by bias boosting is considered, and the implications of the ionizing environment for operation of FIR satellite instruments are outlined.

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