STM observation of Ga -dimers on a GaAs ( 001 ) -c ( 8×2 ) -Ga surface

Details STM observation of Ga -dimers on a GaAs ( 001 ) -c ( 8×2 ) -Ga surface STM observation of Ga -dimers on a GaAs ( 001 ) -c ( 8×2 ) -Ga surface

Aug 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004phrvb..70h1313x&link_type=abstract

Physical Review B, vol. 70, Issue 8, id. 081313

Other

10

Structure Of Clean Surfaces, Iii-V Semiconductors, Scanning Tunneling Microscopes, Surface States, Band Structure, Electron Density Of States

Scientific paper

Using in situ scanning tunneling microscopy (STM) we have obtained high-resolution empty-state images exhibiting triple-protrusion rows on GaAs ( 001 ) -c ( 8×2 ) -Ga surface. We assign the middle protrusion rows to the surface Ga dimers in the ξ model proposed by

Lee et al. [Phys. Rev. Lett. 85, 3890 (2000)

]. The surface Ga dimers, which are responsible for the c ( 8×2 ) periodicity, are the key feature of the ξ structure and have never been imaged in previous STM studies. The current study provides direct evidence for the ξ model, while all other existing models can be readily excluded from our STM images.

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