Thermal diffusivity measurement of near-pseudobinary HgCdTe solid and melt, Te-rich HgCdTe and HgZnTe melts, and pure Te solid and melt by the laser flash technique

Statistics – Applications

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Crystal Growth, Laser Applications, Melts (Crystal Growth), Mercury Cadmium Tellurides, Single Crystals, Tellurium, Temperature Dependence, Thermal Diffusion, Zinc Tellurides, Block Diagrams, Semiconductors (Materials)

Scientific paper

The thermal diffusivities of mercury cadmium telluride, (Hg(1 - x)Cd(x))(1 - y)Te(y), and mercury zinc telluride, (Hg(1 - x)Zn(x)(1 - y)Te(y), with 0.55 less than or equal to y less than or equal to 1.0 and 0.0125 less than or equal to x less than or equal to 0.05465, and of pure Te were measured from 350 to 850 C by the laser flash technique. The diffusivity of near-pseudobinary Hg(1 - x)Cd(x)Te solids decreased more rapidly with temperature approaching the melting point than did pseudobinary solids previously reported: The solid diffusivity for x = 0.028 17 and y = 0.55 was 0.83 sq mm/s at 371 C, decreasing to 0.22 sq mm/s at 614 C. The diffusivity of Te-rich (Hg(1 - x)Cd(x))(1 - y)Te(y) melt increased with x and with temperature: The melt diffusivity for x = 0.039 36 and y = 0.782 was 0.91 sq mm/s at 485 C, increasing to 4.93 sq mm/s at 851 C. For Te-rich (Hg(1 - x)Zn(x))(1 - y)Te(y) melt with x = 0.0125 and y = 0.7944 there appeared to be a minimum diffusivity of about 2.6 sq mm/s near 690 C. The thermal diffusivity of pure Te solid was 0.97 sq mm/s at 300 C and decreases to 0.64 sq mm/s at 439 C. The melt diffusivity of pure Te was 1.52 sq mm/s at 486 C, increased to 3.84 sq mm/s at 584 C. Experimental data presented can be used to calculate the thermal conductivity needed for designing systems capable of growing a better quality single crystal of these materials.

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