Very long wavelength (>15 μm) HgCdTe photodiodes by liquid phase epitaxy

Details Very long wavelength (>15 μm) HgCdTe photodiodes by liquid phase epitaxy Very long wavelength (>15 μm) HgCdTe photodiodes by liquid phase epitaxy

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5564...54r&link_type=abstract

Infrared Systems and Photoelectronic Technology. Edited by Dereniak, Eustace L.; Sampson, Robert E.; Johnson, C. Bruce. Proceed

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This paper reviews and assesses back-illuminated P-on-n photovoltaic HgCdTe detector technology, based on two-layer growth by Liquid Phase Epitaxy on CdZnTe substrates, for application at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that show feasibility of useful cutoff wavelengths as long as 18-19 μm. We recommend that that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and small arrays for NASA remote-sensing applications.

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