Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties

Details Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties

May 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995jemat..24..599c&link_type=abstract

Journal of Electronic Materials, Volume 24, Issue 5, pp.599-608

Computer Science

Performance

8

As, Diffusion, Diode, Hgcdte, Heterojunction, Infrared Detectors

Scientific paper

Arsenic diffusion coefficients were measured in HgCdTe alloy films at 375,400, and 425°C. The diffusion coefficients displayed a strong dependence on Hg pressures at all three temperatures, increasing by 1000 x with decreasing Hg pressure. The Hg pressures employed were selected to span a portion of the single phase field at each temperature. These investigations added to the diffusion measurements at 350°C reported earlier. The behavior reported at all three temperatures generally resembled the behavior observed at 350°C. For example, at 375°C, the diffusion coefficient increased from 1.6 x 10-14 cm2/s for a Hg overpressure of ~1.25 atm, corresponding to the Hg saturated end of the phase field, to 3.2 x 10-12 cm2/s, when the Hg overpressure was decreased to 0.2 atm, at a point within the phase field, but still considerably removed from the Tesaturated end. For mercury pressure ranges generally within an order of magnitude from the Hg saturated end point, the transport behavior remained simple classical and the diffusion coefficients varied approximately as ∝ P{-He/-3} at all three temperatures. With continued decrease in the mercury pressure, the transport behavior still remained simple classical, but the dependence of the diffusion coefficients on mercury pressure became more complex, progressing from a P{-Hg/-3} dependence to a P{-He/-1} dependence. This transition was most apparent at 425°C. With additional decrease in the Hg pressure, the transport behavior became more complex and could no longer be described by a simple classical or a monocomponent concentration independent Fickian model. This range was not studied during the present investigations. Additional progress in tuning the positioning of the p/n junction for double layer heterojunction films was possible from the results obtained. This was demonstrated by comparing diode performances obtained on heterojunctions films subjected to seleccted anneal sequences.

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