UV anti-reflection coatings for use in silicon detector design

Details UV anti-reflection coatings for use in silicon detector design UV anti-reflection coatings for use in silicon detector design

2011-02-10

arxiv.org/abs/1102.2241v1

Astronomy and Astrophysics

Astrophysics

Instrumentation and Methods for Astrophysics

8 pages, 15 Figures. The following article has been submitted to Applied Optics. After it is published, it will be found at

Scientific paper

We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.

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