Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications

Details Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications

Apr 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5726...10t&link_type=abstract

Semiconductor Photodetectors II. Edited by Cohen, Marshall J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5726, pp

Computer Science

Scientific paper

Results of comparative studies of opto-electrical properties of photodiode arrays built on 30-um, 75-um, and 100-um thick single Silicon dies are presented. The size of the square pixels varied from 1.5 mm to 250-um for different arrays with the gaps between adjacent elements as small as 20 um. The internal quantum efficiency was close to 100%, DC and AC cross talks were smaller than 0.01% within the spectral range 400 to 800 nm. The arrays were characterized with very low leakage currents and high shunt resistance - above 1 GΩhm. The features of the array structure are discussed for the first time.

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