Ultra-low-noise 1.2- to 1.7-GHz cooled GaAsFET amplifiers

Details Ultra-low-noise 1.2- to 1.7-GHz cooled GaAsFET amplifiers Ultra-low-noise 1.2- to 1.7-GHz cooled GaAsFET amplifiers

Jun 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982itmtt..30..849w&link_type=abstract

IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, June 1982, p. 849-853.

Computer Science

Performance

19

Field Effect Transistors, Low Noise, Microwave Amplifiers, Transistor Amplifiers, Amplifier Design, Bandwidth, Block Diagrams, Gallium Arsenides, Noise Temperature

Scientific paper

Williams et al. (1980) have provided a description of a cryogenically cooled L-band amplifier utilizing source inductance feedback to achieve input match. The present investigation is concerned with the further development of this amplifier. Computer-aided design techniques are employed to increase bandwidth to 500 MHz and provide stability for any source and load impedance. The obtained amplifier has a noise figure of approximately 0.1 dB at 1.3 GHz. This is achieved with wide bandwidth, impedance match, excellent stability, and relatively small cost and complexity compared with masers which have been required in the past for this noise performance. The amplifier can be used as a radio astronomy front end for observations of the 1.42-GHz hydrogen line and OH lines at 1.61, 1.66, and 1.72 GHz.

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