Two dimensional infrared focal plane arrays utilising a direct inject input scheme

Details Two dimensional infrared focal plane arrays utilising a direct inject input scheme Two dimensional infrared focal plane arrays utilising a direct inject input scheme

Jan 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986spie..685..115b&link_type=abstract

IN: Infrared technology XII; Proceedings of the Meeting, San Diego, CA, Aug. 19, 20, 1986 (A88-12828 02-35). Bellingham, WA, Soc

Computer Science

Performance

Arrays, Charge Coupled Devices, Focal Plane Devices, Infrared Detectors, Multiplexing, Photodiodes, Electric Current, Electrical Resistance, Metal Oxide Semiconductors, Signal To Noise Ratios, Silicon Transistors

Scientific paper

This paper describes two different focal plane arrays, both using direct-injection inputs. A device using a CCD multiplexer is compared with a more novel, multiplexed, electronically-scanned array, which can give better performance in the 8-10 micron band. The basic limitations of the direct injection technique are discussed, including sensitivity to gate bias voltage and to the IR product of the infrared diode. The IR product is proposed as a figure of merit. Charge storage capacity and dynamic range are also discussed, especially in relation to the performance required of the uniformity correction electronics.

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