Transient two-dimensional simulation of SEU in a CMOS SRAM cell

Details Transient two-dimensional simulation of SEU in a CMOS SRAM cell Transient two-dimensional simulation of SEU in a CMOS SRAM cell

Jul 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985nsre.confq....f&link_type=abstract

Presented at the 22nd Ann. Conf. on Nucl. and Space Radiation Effects, Monterey, Calif., 22 Jul. 1985

Mathematics

Logic

Cmos, Computerized Simulation, Cosmic Rays, Energy Storage, Semiconductor Devices, Two Dimensional Models, Metal Oxide Semiconductors, Physiological Effects, Radiation Effects, Semiconductors (Materials)

Scientific paper

Two-dimensional transient simulations of cosmic ion strikes on sensitive
junctions of CMOS SRAM were carried out. The calculations determine time
responses for transport variables of the four cross-coupled transistors
and reveal the conditions for change of state or upset.

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