Transient laser-induced surface deformation of Si-based multilayer structures

Details Transient laser-induced surface deformation of Si-based multilayer structures Transient laser-induced surface deformation of Si-based multilayer structures

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021..208m&link_type=abstract

Proc. SPIE Vol. 2021, p. 208-221, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W.

Astronomy and Astrophysics

Astrophysics

Scientific paper

Transient thermal expansion, heat generation and conduction, nonlinear laser heating, and subsequent melting behaviors of polysilicon/oxide/silicon wafer `sandwich' structures have been investigated via a laser pump-probe technique. Laser processing, damage, and characterization of bulk semiconductor materials has been extensively investigated. However, less is known about the mechanism of laser-induced damage for multilayer structures such as CCD imaging arrays. In order to develop damage resistant sensors and better isolation for sensors used in laser environments, it is necessary to understand the processes contributing to the laser hardness and damage of these sensors. We designed experiments to measure the transient thermomechanical and laser-damage characteristics of multilayer systems that resemble CCD devices. The final objective was to gain some insight into the dominant mechanisms responsible for laser-induced degradation in CCD imaging arrays and devices of similar structures. Positive identification of a precursor event signaling the onset of catastrophic damage and identification of the weakest link elements on the sensor array will be essential for making design or processing modifications to improve hardness. It is our goal in this paper to contribute to the above objectives by describing investigations of laser-induced damage to silicon-based multilayer structures.

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