Three-band 1.0-2.5 um near-infrared InGaAs detector array

Details Three-band 1.0-2.5 um near-infrared InGaAs detector array Three-band 1.0-2.5 um near-infrared InGaAs detector array

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..151o&link_type=abstract

Proc. SPIE Vol. 2225, p. 151-159, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Scientific paper

A novel three wavelength InGaAs focal plane array pixel element for detection at wavelengths from 1.0 to 2.5 micrometers , where each of three wavelength sensitive detectors are individually addressable is described. This device consists of successively smaller bandgap layers in In(subscript x)Ga(subscript 1-x)As (x>=0.53), separated by compositionally graded layers of InAs(subscript y)P(subscript 1-y) to decrease defects induced by lattice mismatch strain with the InP substrate and provide high-bandgap passivation. The various layers were selectively removed so that p-n junctions with different wavelength response could be formed. The three detectors have quantum efficiencies between 55 and 95% for front illumination and 15 and 60% for back illumination, and dark currents from 0.01 to 10 mA/cm(superscript 2).

Affiliated with

Also associated with

No associations

Rating

Three-band 1.0-2.5 um near-infrared InGaAs detector array does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Three-band 1.0-2.5 um near-infrared InGaAs detector array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-band 1.0-2.5 um near-infrared InGaAs detector array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-824660