The time and space distribution of excess carrier in SPRITE device

Details The time and space distribution of excess carrier in SPRITE device The time and space distribution of excess carrier in SPRITE device

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..224l&link_type=abstract

IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90

Other

Carrier Density (Solid State), Carrier Lifetime, Infrared Detectors, Photoconductivity, Signal Processing, Continuity Equation, Minority Carriers

Scientific paper

The distribution of excess carrier in a SPRITE device is studied by solving the ambipolar continuity equation. Boundary recombination effect and sweep-out effect on the lifetime of excess carrier have been studied in a device, and the effect of applied field on the distribution, lifetime and D (wavelength) value. The results show the effect of boundary recombination on lifetime has to be less than body lifetime of material. The scanning velocity, body lifetime and applied field relate to each other.

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