The quantum efficiency of InGaAsSb thermophotovoltaic diodes

Details The quantum efficiency of InGaAsSb thermophotovoltaic diodes The quantum efficiency of InGaAsSb thermophotovoltaic diodes

Jan 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420.1394m&link_type=abstract

Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 1394-1399 (1998).

Other

Photoconduction And Photovoltaic Effects, Iii-V Semiconductors, Photodiodes, Phototransistors, Photoresistors, Thermoelectric, Electrogasdynamic And Other Direct Energy Conversion

Scientific paper

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 μm) bandgaps exhibit external quantum efficiencies of 59% at 2 μm, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 μm in 8-μm-wide p-InGaAsSb layers and hole diffusion lengths of 3 μm in 6-μm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.

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