The on-orbit measurements of single event phenomena by ETS-V spacecraft

Details The on-orbit measurements of single event phenomena by ETS-V spacecraft The on-orbit measurements of single event phenomena by ETS-V spacecraft

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991itns...38.1693g&link_type=abstract

(1991 IEEE Annual Conference on Nuclear and Space Radiation Effects, 28th, San Diego, CA, July 15-19, 1991, Proceedings. A92-240

Computer Science

7

Japanese Spacecraft, Radiation Measurement, Satellite-Borne Instruments, Single Event Upsets, Spaceborne Experiments, Cmos, Integrated Circuits, Latch-Up, Random Access Memory, Solar Flares

Scientific paper

The on-orbit data of single event phenomena were obtained for the CMOS static RAMs equipped in Engineering Test Satellite-V (ETS-V) in a geostationary orbit. The single event latchup and single event upset data were acquired for a period of about three years, and the effects of solar flares were observed. A comparison with the data (single event upset) of TTL SRAMs by Marine Observation Satellite-1 (MOS-1: a medium-altitude satellite) was also conducted. The Poisson distribution and the extreme-value theory (doubly exponential distribution) were adopted to analyze the data. From this analysis a decrease of the number of single events could be found during the solar maximum.

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