Astronomy and Astrophysics – Astrophysics
Scientific paper
Apr 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aps..apri13014k&link_type=abstract
American Physical Society, April Meeting, Jointly Sponsored with the High Energy Astrophysics Division (HEAD) of the American As
Astronomy and Astrophysics
Astrophysics
Scientific paper
A GaAs detector may offer the possibility to be applied as radiation detector in high-energy physics, study neutrino properties, solar physics and medical or biological X-ray imaging. The promising characteristics of GaAs for detectors originate from its superior material properties: a wide band gap and high electron mobility. However, present GaAs crystals cannot be used in bulk detectors due to the high concentration of structural defects. The two primary properties that control the transport of free carriers produced by ionizing radiation are the concentrations of residual impurities and native defects of the crystal lattice. The quality of the material for use as a detector might be improved by a reduction of the growth temperature as that could result in a decrease of both residual impurities and native defects. We have constructed the equipment for low-temperature (below the melting point of GaAs) growth of bulk single crystals of GaAs. Test runs of the new system indicate that we can achieve all of the parameters required for low-temperature growth GaAs. Measurements of test crystals indicate that we may be able to produce crystals with improved properties in the near future.
Bowles Thomas
Eremin Vladimir
Gavrin Vladimir
Hime Andrew
Kalikhov Anatoli
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