The CCD flash gate

Astronomy and Astrophysics – Astronomy

Scientific paper

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Charge Coupled Devices, Flash, Gates (Circuits), Quantum Efficiency, Spaceborne Telescopes, Electric Current, Energy Gaps (Solid State), Epitaxy, N-Type Semiconductors, P-N Junctions

Scientific paper

Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.

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