Testing of readout device processing electronics for IR linear and focal plane arrays

Details Testing of readout device processing electronics for IR linear and focal plane arrays Testing of readout device processing electronics for IR linear and focal plane arrays

Oct 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3436..942s&link_type=abstract

Proc. SPIE Vol. 3436, p. 942-948, Infrared Technology and Applications XXIV, Bjorn F. Andresen; Marija Strojnik Scholl; Eds.

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For preliminary selection of the silicon read-out devices designed for applications in hybrid mercury-cadmium-telluride (MCT) IR linear or matrix arrays manufactured according to flip-chip technology, there was designed constructions of the testing circuits imbedded into the read-out devices to test them before hybridization. Also the procedure of their testing at room temperature without attachment to the MCT photo- voltaic multielement arrays was developed. There were designed some types of multielement silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with n+-p- or p+-n-photodiodes with dynamical resistance at reverse bias R greater than or equal to 107 (Omega) . Into these read-out devices there were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of MCT photodiodes. The silicon read-out devices for 2 X 64 linear arrays and 2 X 4 X 128 (144) TDI arrays with direct and buffered direct charge injection were manufactured by n-channel MOS technology with CCD register with buried channel. By changing the frequency of the control impulses here were investigated the characteristics of the read-out devices for time delay and integration (TDI) arrays in the regime of integration and without it (in TDI channel).

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