Terahertz-frequency quantum oscillator operating in the positive differential resistance region

Details Terahertz-frequency quantum oscillator operating in the positive differential resistance region Terahertz-frequency quantum oscillator operating in the positive differential resistance region

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5790..289z&link_type=abstract

Terahertz for Military and Security Applications III. Edited by Hwu, R. Jennifer; Woolard, Dwight L.; Rosker, Mark J. Procee

Statistics

Applications

Scientific paper

The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling structures (RTS) are engineered to exhibit electronic instabilities within the positive-differential-resistance (PDR) region. As will be demonstrated, this approach utilizes a microscopic instability that alleviates the need to reduce device area (and therefore output power) in an effort to achieve low-frequency stabilization.

Affiliated with

Also associated with

No associations

Rating

Terahertz-frequency quantum oscillator operating in the positive differential resistance region does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Terahertz-frequency quantum oscillator operating in the positive differential resistance region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Terahertz-frequency quantum oscillator operating in the positive differential resistance region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1379289