Temperature Dependent PL Properties of ASF Structures Prepared By Vapour Etching Technique

Details Temperature Dependent PL Properties of ASF Structures Prepared By Vapour Etching Technique Temperature Dependent PL Properties of ASF Structures Prepared By Vapour Etching Technique

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..610k&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 610-610 (2007).

Other

Other Solid Inorganic Materials, Porous Materials, Surface Cleaning, Etching, Patterning

Scientific paper

Temperature dependent photoluminescence (PL) measurements of (NH4)2SiF6
(ASF) structures prepared by the well known vapour etching technique are
carried out for temperatures ranging from 10K to 300K. It is observed
that PL peak position shifts to higher energies and the intensity is
reduced as the temperature decreases.

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