Synthesis and Analysis of a Quaternary Static RAM Using Quantizing Circuits

Details Synthesis and Analysis of a Quaternary Static RAM Using Quantizing Circuits Synthesis and Analysis of a Quaternary Static RAM Using Quantizing Circuits

Sep 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999stin...0083064s&link_type=abstract

Memoirs of the Faculty of Engineering, Miyazaki University, p. 151

Mathematics

Logic

Static Characteristics, Random Access Memory, Multiple Access, Electric Potential, Systems Engineering, Diagnosis, Simulation, Ion Implantation, Logic Circuits, Low Cost, Counters, Cmos, Circuits

Scientific paper

In this paper, a voltage mode multiple valued static random access memory (MVSRAM) with a multiple valued quantizer is described. The proposed circuit has the merits of simplicity and low cost on fabrication, since it is implemented by standard CMOs process, instead of the conventional multi-level ion implantation usually applied in the voltage-mode multi-valued logic (MVL) circuit. The performance of the proposed MVSRAM is estimated by HSPICE simulations with MOSIS 2.0 microns CMOs process parameter.

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