Computer Science – Performance
Scientific paper
May 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..250w&link_type=abstract
Proc. SPIE Vol. 4650, p. 250-258, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.
Computer Science
Performance
1
Scientific paper
This study describes fabrication of heterojunction HgCdTe photodiodes passivated with a wide band-gap CdTe epitaxial layer. The current-voltage characteristics of these photodiodes with and without passivation have been investigated. It is shown that for reverse bias the measured I-V characteristics can be explained by a surface tunneling current and surface generation current. The breakdown voltage is observed to decrease monotonically with increasing temperature, a trend that is directly opposite to what would be expected from a pure tunneling mechanism. Additional information on surface limitations is obtained from analyzing the R0A product as a function of temperature. The performance of both type of p-n VLWIR HgCdTe photodiodes (with and without the passivating layer) have been compared.
Rogalski Antoni
Rutkowski Jaroslaw
Wenus Jakub
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