Substrate effects in superconducting tunnel junction detectors

Details Substrate effects in superconducting tunnel junction detectors Substrate effects in superconducting tunnel junction detectors

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..335l&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 335-338 (SEE N94-15025 03-19)

Computer Science

Junction Diodes, Substrates, Superconducting Devices, Tunnel Diodes, X Ray Spectroscopy, Aluminum Oxides, Niobium, Silicon

Scientific paper

Superconducting Nb/AlOx/Nb tunnel junction detectors on bulk Si substrates show a spatially inhomogeneous detector response when part of the energy of an ionizing particle is deposited in the substrate. Nb/AlOx/Nb tunnel junctions with V(sub m) = 24 mV were prepared on 1 to 2 micrometer thick Si membranes. The spatial homogeneity of the response signal for the detection of 35 keV electrons improves significantly for junctions on Si membranes as compared to junctions on bulk silicon. The signal decay time for the membrane detector is about 450 microseconds at T = 5K, reducing the minimum energy (e) required to generate and count a single excess quasiparticle to (e) less than 6 meV. Constraints for the spectroscopy of X-rays with high energy resolution in superconducting tunnel junction detectors are discussed.

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