Subpixel sensitivity map for a charge-coupled device

Details Subpixel sensitivity map for a charge-coupled device Subpixel sensitivity map for a charge-coupled device

Mar 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998opten..37..948k&link_type=abstract

Optical Engineering 37(03), 948-954, Donald C. O'Shea; Ed.

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The sensitivity across a solid state detector array varies as a result of differences in transmission, diffusion and scattering properties over the sensor. This variation will occur over a range of scale lengths and its knowledge is of importance for improved device design and in a variety of applications, for examples, event centroiding in photon counting systems. A measurement of the sensitivity variation on a subpixel scale for a two-phase front-illuminated CCD is reported. The measurement is made using a scanning reflection microscope. A variation in sensitivity between the phases within a pixel is clearly observed, as well as variations on a much smaller spatial scale.

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