STIS CCD Hot Pixel Annealing {SMOV4 activity STIS-05}

Computer Science – Performance

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Scientific paper

This purpose of this activity is to repair radiation induced hot pixel damage to the STIS CCD by warming the CCD to the ambient instrument temperature and annealing radiation damaged pixels. Radiation damage creates hot pixels in the STIS CCD Detector. Many of these hot pixels can be repaired by warming the CCD from its normal operating temperature near -83?C to the ambient instrument temperature { +5?C} for several hours. The number of hot pixels repaired is a function of annealing temperature. So although the CCD during Safing has been warmer { -5?C} than its normal operating temperature, the electronics have been off and the CCD has remained cooler than its temperature {+5?C} during anneal procedure. The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects. In addition CTE performance is examined by looking for traps in a low signal level flat. This proposal is a continuation of the Cycle 12 proposal 10022. Execute after STIS-04 and after the TEC has been on and cooling the CCD detector for a minimum of 3 hours. This permits acquisition of pre-anneal CCD performance data. There is no thermostat controlling the CCD temperature on Side-2. This activity needs to execute prior to all STIS SMOV4 activities requiring use of the CCD {e.g. STIS-06}.;

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