Computer Science – Performance
Scientific paper
Sep 1995
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2552..110f&link_type=abstract
Proc. SPIE Vol. 2552, p. 110-121, Infrared Technology XXI, Bjorn F. Andresen; Marija S. Scholl; Eds.
Computer Science
Performance
Scientific paper
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy doped p-type HgCdTe. The photodiodes are planar structures passivated with thermally evaporated ZnS. High performance MWIR photodiodes have been developed with RoA product of 2 X 106 (Omega) cm2 at 77 K. Recent work has focused on developing novel passivation processes based on anodic sulphurdization in which thermally evaporated ZnS is subsequently anodized in a non-aqueous sodium sulphide solution. Preliminary results suggest that this improves the insulating properties of thermally evaporated ZnS layers. The leakage currents, as measured through a 1 mm2 MIS structure at a 1 V bias at 77 K, for the anodized ZnS layer are in the sub-picoamp range for all devices fabricated, whereas for the non-anodized layer the leakage currents are typically much larger by up to 3 - 4 orders of magnitude.
Dell John M.
Faraone Lorenzo
Fynn Kevin A.
Nener Brett D.
Siliquini John F.
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