Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets

Details Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets

2010-10-04

arxiv.org/abs/1010.0471v1

International Journal of VLSI Design & Communication Systems(VLSICS) Vol.1, No.3, September 2010

Computer Science

Other Computer Science

12 pages

Scientific paper

10.5121/vlsi.2010.1304

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel and Source/Drain doping and less sensitive to source/drain width and length, and work function variations. Statistical modelling has been performed for ft through design of experiment with respect to sensitive parameters. The model has been validated through a comparison between random set of experimental data simulations and predicted values obtained from the model.

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