Sputtering of Si(001) and Si C(001) by grazing ion bombardment

Details Sputtering of Si(001) and Si C(001) by grazing ion bombardment Sputtering of Si(001) and Si C(001) by grazing ion bombardment

Jul 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008pobeo..84..209e&link_type=abstract

Publications of the Astronomical Observatory of Belgrade, vol. 84, pp. 209-213

Astronomy and Astrophysics

Astronomy

Scientific paper

The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E_0 = 0.5-5 keV) and angle of incidence (psi = 0-30^o) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.

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