Soft x-ray detection efficiency of large-area avalanche photodiodes

Details Soft x-ray detection efficiency of large-area avalanche photodiodes Soft x-ray detection efficiency of large-area avalanche photodiodes

Nov 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2283..164g&link_type=abstract

Proc. SPIE Vol. 2283, p. 164-171, X-Ray and Ultraviolet Spectroscopy and Polarimetry, Silvano Fineschi; Ed.

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The efficiency of beveled edge type avalanche photodiodes has been determined for soft x rays in the range 50 eV to 300 eV. An efficiency of over 80% is measured for energies below the Si L absorption edge at 100 eV. The measured efficiency is described by a model which accounts for absorption in an oxide overlayer and recombination at the front surface of the diode. These results are very encouraging for soft x-ray/EUV applications involving both laser-produced plasma sources and synchrotron radiation.

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