Computer Science
Scientific paper
Jan 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5633..303c&link_type=abstract
Advanced Materials and Devices for Sensing and Imaging II. Edited by Wang, Anbo; Zhang, Yimo; Ishii, Yukihiro. Proceedings of
Computer Science
Scientific paper
In this study, tin precursor layers were deposited on ITO glass substrates by thermal evaporation, and sulphurised in a vacuum furnace at the temperature range between 423-673K, in order to translate the tin layers into compound SnS layers. All the layers synthesized were characterized with X-ray diffractograms, microstructure analysis. It was found that the best SnS films were synthesized for sulphurisation at temperature 573-673K, and they were polycrystalline with a strong {111} preferred orientation, and they had orthorhombic crystal structure with a grain size of a few hundred nanometers and exhibited near stoichiometric SnS composition. The near stoichiometric SnS film was measured to have a p-type electrical conductivity and a resistivity of the order of 102 Ω.cm , and its optical properties were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range 400-2500nm, the films were transparent for a wavelength >1250nm.
Chen Guonan
Cheng Shuying
Huang Cichang
Zhong Nanbao
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