Small-signal simulation of IMPATT diode amplifiers

Mathematics

Scientific paper

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Amplifier Design, Avalanche Diodes, Microwave Amplifiers, Signal Processing, Frequency Response, Impedance Matching, Mathematical Models

Scientific paper

A small-signal model for an IMPATT diode amplifier is presented. An accurate lumped model, which includes temperature and field-dependent carrier velocities and ionization rates, is used to calculate the chip impedances of the IMPATT diode, as functions of frequency and bias current. The diode package and impedance matching sections of the amplifier are represented by a lumped element equivalent circuit and transmission line equations. The accuracy of this amplifier simulation is confirmed by comparing computed and measured frequency-response behavior. Additional results are used to illustrate the flexible nature of the model.

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