Computer Science
Scientific paper
Jul 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..200r&link_type=abstract
Proc. SPIE Vol. 3379, p. 200-212, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.
Computer Science
12
Scientific paper
We report results for 64 X 64 simultaneous MW/LW dual-band HgCdTe Focal Plane Arrays (FPAs). The MW and LW average cutoff wavelengths at 78 K are in the 4.27 - 4.35 micrometer and 10.1 - 10.5 micrometer ranges respectively. The unit cell size is 75 X 75 micrometer(superscript 2). These staring dual-band FPAs exhibit high average quantum efficiencies (MW: 79%; LW:67%), high median detectivities (MW: 4.8 X 10(superscript 11) cm- (root)Hz/W; LW: 7.1 X 10(superscript 10) cm-(root)Hz/W), low median NE(Delta) Ts (MW: 20 mK; LW: 7.5 mK for T(subscript SCENE) equals 295 K and f/2.9), large dynamic ranges (MW: 77 dB; LW: 75 dB), and 87% stare efficiencies for both the MW and LW spectral bands. The dual-band HgCdTe detector array is fabricated from a four- layer P-n-N-P film grown in situ by MOVPE. The dual-band silicon CMOS input circuit utilizes a unique floating-direct- injection approach to achieve separate and simultaneous integration of both bands within each unit cell. There are two Compact Signal Averager circuits in each unit cell, to average subframes within every frame for each spectral band, allowing full stare efficiency in both spectral bands, as well as variable band-independent transimpedance gains. These data confirm that all key features of our P-n-N-P dual-band HgCdTe detector and our dual-band input circuit function as designed.
Case F. C.
Hairston Allan W.
Mitra Pradip
Musicant B. L.
O'Dette P.
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