Silicide/SiGe Schottky diode infrared detectors

Details Silicide/SiGe Schottky diode infrared detectors Silicide/SiGe Schottky diode infrared detectors

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..393j&link_type=abstract

Proc. SPIE Vol. 2225, p. 393-403, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Scientific paper

PtSi/Si/SiGe/Si Schottky diode IR detectors with extended and tunable cut-off wavelengths have been fabricated. Cut-off wavelengths depend on the SiGe composition and extend up to 10 micrometers for Si(subscript 80)Ge(subscript 20). The cut-off wavelengths are also tunable by reverse bias. The tunability is due to the SiGe/Si offset serving as an additional potential barrier behind the Schottky barrier that can be varied in energy by a reverse bias. The sensitivity and range of the tunability is controlled by the SiGe thickness and composition. Cut-off wavelengths tunable from 4 micrometers at zero volts to 10 micrometers at 3 volts have been obtained. Quantum efficiency values are normal for operation at the long- wavelength end, but reduced over the rest of tunable range, because of the greater distance from the PtSi to the SiGe/Si offset.

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