Shallow p(+) layers in In(0.53)Ga(0.47)As by Hg implantation

Details Shallow p(+) layers in In(0.53)Ga(0.47)As by Hg implantation Shallow p(+) layers in In(0.53)Ga(0.47)As by Hg implantation

Jan 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985ell....21..122l&link_type=abstract

Electronics Letters (ISSN 0013-5194), vol. 21, Jan. 31, 1985, p. 122-124.

Other

4

Gallium Arsenides, Indium Arsenides, Ion Implantation, Mercury (Metal), P-N Junctions, Semiconductors (Materials), Acceptor Materials, Annealing, Fabrication, Hole Distribution (Electronics), Particle Diffusion, Volt-Ampere Characteristics

Scientific paper

It is pointed out that In(0.53)Ga(0.47)As grown lattice matched on InP is apparently a material of high interest for high-frequency and optoelectronic devices. For some devices, especially for structures in junction FETs, shallow and abrupt p(+)n junctions are required. Efforts to obtain thin p-type layers have not been successful, because the employed acceptor impurities, including Be, Zn, and Cd, show relatively high diffusion. The present investigation is concerned with the use of an acceptor impurity which diffuses more slowly. For the first time a shallow p(+)-n homojunction could be fabricated on In(0.53)Ga(0.47)As by making use of mercury ion implantation. It was found that mercury does not diffuse towards the bulk, whereas other acceptor impurities do.

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