Semiconductor measurement technology: Improved characterization and evaluation measurments for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites

Details Semiconductor measurement technology: Improved characterization and evaluation measurments for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites Semiconductor measurement technology: Improved characterization and evaluation measurments for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites

Apr 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994stin...9514401s&link_type=abstract

Semiconductor measurement technology: Improved characterization and evaluation measurments for HgCdTe detector materials, proces

Computer Science

Performance

Electrical Properties, Electronic Equipment Tests, Goes Satellites, Infrared Detectors, Mercury Cadmium Tellurides, Photoconductive Cells, Semiconductors (Materials), Tiros Satellites, Bonding, Calibrating, Electronic Packaging

Scientific paper

An extensive study was carried out to improve the characterization and evaluation methods used for HgCdTe (mercury cadmium telluride) photoconductive infrared detectors used in GOES and TIROS satellites. High-field magnetotransport techniques were used to determine the electrical properties of the detector accumulation layers, which partially control their detectivities. Assessments were made of the quality of the bonding and packaging used in detector fabrication, and a list of recommended practices was produced. The applicability of scanning capacitance microscopy and test structures to detector-array evaluation is discussed, and finally recommendations are made for standardized detector calibration. The results of this work have provided new and more refined measurement methods that can be adapted by the detector manufacturers to improve performance and yield.

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