Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride

Details Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3794...88b&link_type=abstract

Proc. SPIE Vol. 3794, p. 88-95, Materials and Electronics for High-Speed and Infrared Detectors, Stephen M. Goodnick; Walter F.

Computer Science

Scientific paper

In this report a new up to dated view on the compensation mechanism in CdTe bulk crystals doped with Cl in concentration up to 10(superscript 19) cm(superscript -3) is given. This concentration of Cl doping gives a high resistivity material. The chlorine atoms can act as shallow donors being in Te sites or can form complex with cadmium vacancies, so called A-centers. Spatially resolved EDAX mapping of CdTe doped revealed nonstoichiometrical areas distributed over the surface. In these areas there are a high concentration of impurities, where the Cl is located in a very small inclusions, while Na is distributed all over the volume of the big inclusions. After a short-time annealing (4 hours) at low temperature (500 degree(s)C) in Cd atmosphere the areas with deviation from stoichiometry mostly disappeared as well as the inclusions which were present inside. This paper includes a review of the different aspects, which can influence a precise compensation mechanism in a non-doped and Cl doped CdTe.

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