Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Details Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..223k&link_type=abstract

Proc. SPIE Vol. 3629, p. 223-229, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

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Scientific paper

We report the growth and characterization of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiO(subscript x) mask stripes.

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