Scale-up of LPE processes for flexibility in manufacturing

Details Scale-up of LPE processes for flexibility in manufacturing Scale-up of LPE processes for flexibility in manufacturing

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2228...73n&link_type=abstract

Proc. SPIE Vol. 2228, p. 73-83, Producibility of II-VI Materials and Devices, Herbert K. Pollehn; Raymond S. Balcerak; Eds.

Computer Science

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Scientific paper

Focal plane arrays fabricated in Hg1-xCdxTe have matured to the point where they are entering pilot production for military and civilian applications. Loral chose the p-on-n heterostructure photodiode architecture produced by a two step LPE process for production scale-up because of its demonstrated high performance over a broad range of cut-off wavelengths from approximately equals 4 micrometers to > 15 micrometers . To meet the manufacturing requirements of high throughput and flexibility, Loral has successfully scaled and transferred into production, both tellurium rich horizontal slider (for growth of the active n-type base layer) and mercury rich vertical dipping (for growth of the p-type cap layer) technologies. This approach capitalizes on the advantages of each process to maximize the producibility of LPE films in a manufacturing environment. This paper discusses the advantages of horizontal Te-rich growth. Production reactors have demonstrated excellent compositional uniformity (+/- 0.005 in x) over 24 cm2. Issues related to the scale-up of the equipment are discussed.

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