Room-temperature InGaAs detector arrays for 1.0 - 1.7 microns spectroscopy

Details Room-temperature InGaAs detector arrays for 1.0 - 1.7 microns spectroscopy Room-temperature InGaAs detector arrays for 1.0 - 1.7 microns spectroscopy

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..188o&link_type=abstract

IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90

Computer Science

Performance

Electrical Properties, Gallium Arsenides, Infrared Detectors, Infrared Spectroscopy, Photodiodes, Vapor Phase Epitaxy, Energy Gaps (Solid State), Indium Arsenides, Linear Arrays, Room Temperature

Scientific paper

Linear arrays of 256 element InGaAs detectors with 100 x 30 micron pixels were mounted in multiplexer packages and tested in an optical multichannel analyzer (OMA). Typical performance characteristics include dark current (-5V) of 400 picoamps and responsivities of 0.75 A/W (1.3 microns) and 0.14 A/W (0.85 microns). The 256 element exhibited a mean room-temperature dark current of under 400 picoamps when mounted in the OMA and a dynamic range over 11 bits (2000:1). Future applications, including room-temperature detector arrays for 2.5 microns and avalanche photodiode arrays for 1.0-1.7 microns, are discussed.

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