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Scientific paper
Jan 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002jap....91..724y&link_type=abstract
Journal of Applied Physics, Volume 91, Issue 2, pp. 724-731 (2002).
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3
Iii-V Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Phonons Or Vibrational States In Low-Dimensional Structures And Nanoscale Materials, Surface And Interface Dynamics And Vibrations, Tunneling, Galvanomagnetic And Other Magnetotransport Effects, Phonon-Electron And Phonon-Phonon Interactions, Polarons And Electron-Phonon Interactions
Scientific paper
The role of interface-optical (IO) phonons in tunneling through an asymmetric double barrier structure in a magnetic field perpendicular to the barriers is studied. The phonon-assisted tunneling current densities are calculated and the numerical results for typical AlxGa1-xAs/GaAs/AlyGa1-yAs structures are given. The theoretical results show that the applied magnetic field sharpens and heightens the phonon-assisted tunneling peaks in agreement with experimental observations. In contrast to previous work, the calculated IO phonon-assisted tunneling current peak occurs at the energy the same as that of the bulk GaAs longitudinal-optical (LO) phonon energy. The IO phonon-assisted tunneling is much more important than the confined LO phonon-assisted tunneling. The phonon-assisted tunneling currents are sensitive to the thickness of the emitter barrier. Only one phonon-assisted tunneling peak can be easily observed for the wider well case.
Liang Xi Xia
Yan Zu Wei
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