Review of key trends in HgCdTe materials for IR focal plane arrays

Details Review of key trends in HgCdTe materials for IR focal plane arrays Review of key trends in HgCdTe materials for IR focal plane arrays

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021....2c&link_type=abstract

Proc. SPIE Vol. 2021, p. 2-9, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W. Baa

Computer Science

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Scientific paper

The need for high-performance, low-cost IR focal plane arrays is a constant driver for materials technology improvement. Due to its high quantum efficiency and variable bandgap capability, HgCdTe is the preferred materials systems for a wide range of applications. HgCdTe crystal growth has evolved over the past fifteen years from relatively small (< 10 mm diameter) bulk multigrained ingots to large (approximately 75 mm diameter) epitaxial layers on composite substrates, but issues regarding material quality and producibility remain. Epitaxial techniques are now firmly established as the superior approaches for the growth of large-area, compositionally uniform material. Enabling this trend is the extensive progress in the size and crystalline quality of bulk lattice-matched CdZnTe substrates and the emergence of large-area heteroepitaxial substrates with CdTe and CdZnTe buffer layers on GaAs and Si. Because of the multiple interfaces, defect levels in the latter tend to be about 100 X larger than in bulk substrates; reducing these levels will be a challenge for the near future. In the meantime, bulk substrates will remain in demand for their lower dislocation densities.

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