Resistance changes of carbon-palladium films obtained by PVD for sensor's applications

Details Resistance changes of carbon-palladium films obtained by PVD for sensor's applications Resistance changes of carbon-palladium films obtained by PVD for sensor's applications

Jun 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011spie.8008e..71m&link_type=abstract

Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2011. Edited by Romaniuk, Ry

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In this research the results of resistance changes for carbonaceous-palladium films taking place under the influence of gaseous surrounding with the contents of 1% H2, 99% N2 have been presented. The films were received by PVD method and their characteristics from the point of view of topography and morphology was done using scanning electron microscope (SEM). The films with different contents, surface topography and morphology were investigated from the point of view of resistance changes taking place under the influence of gaseous surrounding. These changes can be correlated with the changes of Pd contents.

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