Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

Details Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

Sep 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2894...74w&link_type=abstract

Proc. SPIE Vol. 2894, p. 74-81, Detectors, Focal Plane Arrays, and Applications, William G. Frederick; Junhong Su; Marc Wigdor;

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In this paper, we present a new electrode structure for P(superscript +)-Ge(subscript x)Si(subscript 1-x)/p-Si heterojunction internal photoemission (HIP) long-wavelength infrared detector (LWIRD). The advantages of this structure has been verified by experimental results. The electrical and photoresponse characteristics of the detector with 100 nm-thick Ge(subscript 0.3)Si(subscript 0.7) layer at 77 K are reported. In addition, a new analytic quantum efficiency model for P(superscript +)-Ge(subscript x)Si(subscript 1-x)/p-Si HIP LWIRD is built based on modification of old model. Comparing with old models, it is characterized in that the impact of carriers transporting on quantum efficiency is considered. It is shown that this model is more consistent with actuality than old model through the comparison between the theoretical results and experimental results. The optimal thickness of Ge(subscript x)Si(subscript 1-x) layer can be estimated by this model and the result also agrees with the experiment.

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