Rectifying contacts to n-type 6H and 4H-SiC

Details Rectifying contacts to n-type 6H and 4H-SiC Rectifying contacts to n-type 6H and 4H-SiC

Jan 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997aipc..387..851l&link_type=abstract

Space technology and applications international forum (STAIF - 97). AIP Conference Proceedings, Volume 387, pp. 851-856 (1997).

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Applications

Surface Barrier, Boundary, And Point Contact Devices, Surface Double Layers, Schottky Barriers, And Work Functions, Semiconductor-Device Characterization, Design, And Modeling

Scientific paper

Schottky diodes were fabricated using Ni on both n-type 4H and 6H-SiC. The barrier height, ideality factor, and reverse leakage current at -10 V bias were measured for Ni contacts to 6H-SiC over the course of long-term (~9000 hour) thermal stressing at 573 K. Barrier heights generally decreased slightly during the thermal stressing to within ~0.2 eV of the as-deposited value (~1.1 eV) for all contacts, but uncharacteristically large leakage currents (several mA) were observed on some contacts after 2000 hours at 573 K; other contacts exhibited stable electrical characteristics up to 9000 hours. Using RBS analysis, no appreciable silicide formation was observed after 4000 hours of 573 K vacuum anneals, indicating that the large leakage currents were not associated with barrier lowering of the contact, but were possibly due to a combination of the high electric fields around the edges of the contacts and defects in the SiC material. Argon ion-implantation was used to increase the resistivity of the SiC material surrounding the contacts, resulting in reduced leakage currents as well as improved forward I(V) characteristics. Ni contacts to 4H-SiC samples typically exhibited better electrical characteristics than the 6H-samples, with measured barrier heights of ~1.2 eV and as-deposited leakage currents of ~10-11 A. The Ar implant to 4H-SiC samples resulted in improved forward I(V) characteristics, although leakage currents remained essentially the same; probably due to the improved material quality of the 4H-SiC, which was purchased more recently than the 6H-SiC used for this study.

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